Frontiers of Optoelectronics, 2008, 1 (3): 313, 网络出版: 2012-11-06
AlGaAs/GaAs quantum well infrared photodetector focal plane array based on MOCVD technology
AlGaAs/GaAs quantum well infrared photodetector focal plane array based on MOCVD technology
metal organic chemical vapor deposition (MOCVD) AlGaAs/GaAs quantum well infrared photodetector (QWIP) infrared thermal images
摘要
Abstract
1286128, 1286160 and 2566256 AlGaAs/GaAs quantum well infrared photodetector (QWIP) focal plane arrays (FPA) as well as a large area test device are designed and fabricated. The device with n-doped backilluminated AlGaAs/GaAs quantum structure is achieved by metal organic chemical vapor deposition (MOCVD) epitaxial growth and GaAs integrated circuit processing technology. The test device is valued by its dark current performance and Fourier transform infrared spectroscopy (FTIR) spectra at 77 K. Cut off wavelengths of 9 and 10.9 mm are realized by using different epitaxial structures. The blackbody detectivity DB* is as high as 2.66 109 cm·Hz1/2·W21. The 1286128 FPA is flip-chip bonded on a CMOS readout integrated circuit with indium (In) bumps. The infrared thermal images of some targets under room temperature background have been successfully demonstrated at 80 K operating temperature. In addition, the methods to further improve the image quality are discussed.
Xianjie LI, Yingbin LIU, Zhen FENG, Fan GUO, Yonglin ZHAO, Run ZHAO, Rui ZHOU, Chen LOU, Shizu ZHANG. AlGaAs/GaAs quantum well infrared photodetector focal plane array based on MOCVD technology[J]. Frontiers of Optoelectronics, 2008, 1(3): 313. Xianjie LI, Yingbin LIU, Zhen FENG, Fan GUO, Yonglin ZHAO, Run ZHAO, Rui ZHOU, Chen LOU, Shizu ZHANG. AlGaAs/GaAs quantum well infrared photodetector focal plane array based on MOCVD technology[J]. Frontiers of Optoelectronics, 2008, 1(3): 313.