Frontiers of Optoelectronics, 2008, 1 (3): 341, 网络出版: 2012-11-06  

Optical properties of InN films grown by MOCVD

Optical properties of InN films grown by MOCVD
作者单位
1 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
2 National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
摘要
Abstract
By means of optical absorption, photoluminescence (PL), Raman scattering and ellipsometry, optical properties of indium nitride (InN) films grown by metal organic chemical vapor deposition (MOCVD) are investigated. Through absorption and PL measurements, it is proven that the band gap of high quality InN is 0.68 eV, which agrees with the recently reported value, 0.7 eV. By analysis of the Raman scattering spectrum, the comparatively low background concentration of electron results in a smaller band gap value. The transition energy of wurtzite InN at critical point is determined by ellipsometric spectra. In addition, the complex refractive index of InN at energy ranging from 0.65 to 4.0 eV is obtained for the first time.

Jieying KONG, Bin LIU, Rong ZHANG, Zili XIE, Yong ZHANG, Xiangqian XIU, Youdou ZHENG. Optical properties of InN films grown by MOCVD[J]. Frontiers of Optoelectronics, 2008, 1(3): 341. Jieying KONG, Bin LIU, Rong ZHANG, Zili XIE, Yong ZHANG, Xiangqian XIU, Youdou ZHENG. Optical properties of InN films grown by MOCVD[J]. Frontiers of Optoelectronics, 2008, 1(3): 341.

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