以二乙基锌和水分别作为金属前驱体和反应物, 利用原子层沉积方法(ALD)在柔性衬底上生长ZnO薄膜, 讨论了生长温度对薄膜特性的影响。用AFM、XRD和HALL等对薄膜的表面形貌、晶体结构和电学性质进行表征, 并且用PL光谱表征了其光学特性。实验结果表明, 随着生长温度(低温下)的升高, 薄膜的晶体质量和光学特性得到改善。当生长温度为170 ℃时, 薄膜呈现良好的c轴择优取向, 且具有较高的电子浓度(5.62×1019 cm-3)和电子迁移率(28.2 cm2·V-1·s-1)。

ZnO films were grown on flexible substrate by the atomic layer deposition (ALD) using diethyl zinc (DEZn) as a metal precursor and water as a reactant. AFM, XRD and HALL effect were used to investigate the morphology, structural and electrical properties of the films. PL spectrum was measured for optical property. With the increasing temperature, the crystal quality and optical property of the films were improved. When grown at 170 ℃, the films exhibited c-axis orientation, the electron concentration was 5.62×1019 and the electron mobility was 28.2 cm2·V-1·s-1.