薄膜晶体管(TFT)作为像素单元充放电的开关，其漏电流(Ioff)大小是影响液晶屏性能的重要参数之一。文章利用薄膜晶体管的非晶硅层为光敏材料的特点，通过液晶屏翻转实验、背光亮度变化实验、min flicker-Vcom变化实验测量了flicker的大小，验证了光照强度增强导致Ioff增加后，出现了flicker增大的现象，确定了Ioff过高导致flicker的测试方法，通过实验进一步确定了Ioff大小对flicker的影响。

Thin film transistor (TFT) plays an important role as a charging and discharging switch of pixel. Its photo current leakage (Ioff) has a significant influence on the performance of LCD quality. In this paper, photosensitive characteristic of a-Si was used in the LCD screen flip experiment, backlight brightness change experiment, min flicker-Vcom change experiment and flicker was also tested. It is verified that high Ioff in the condition of illumination increased lead to serious flicker phenomenon. The influence of Ioff impact on flicker was further confirmed through these experiments.