红外, 2012, 33 (11): 30, 网络出版: 2012-12-14
水浴沉积法制备硫化镉薄膜的初步研究
The Preliminary Study of CdS Thin-film Prepared by Chemical Bath Deposition
摘要
采用化学水浴沉积法制备了半导体薄膜硫化镉(CdS)太阳能电池材料 , 对影响成膜的因素以及薄膜的结构和光学性能进行了初步测试研究。 结果表明, 反应溶液的pH值以及薄膜的退火温度是影响成膜的重要因素。实验中pH值范围控制在10.5~10.8之间,最佳退火温度为400°C。另外退火时滴加CdCl2 溶液并将其涂 抹于薄膜表面,可以使薄膜在可见光范围的透过率得到进一步的提高。
Abstract
The cadmium sulfide (CdS) semiconductor thin film for solar cells were prepared by using a chemical bath deposition method. The factors which had influence on film formation, film structure and its optical properties were tested and studied preliminary. The result showed that the pH value of the reaction solution and the annealing temperature were the main factors that had influence on film formation. In the experiment, the pH value was controlled in the range from 10.5 to 10.8 and the optimum annealing temperature was 400 ℃. In addition, by dropping some CdCl2 solution and dripping it onto the surface of the film in annealing, the transmittance of the film in the region of visible light can be further improved.
林健敏, 解振海, 颜佳华, 乔逸舟, 曹元硕, 林英豪, 李建康. 水浴沉积法制备硫化镉薄膜的初步研究[J]. 红外, 2012, 33(11): 30. LIN Jian-min, XIE Zhen-hai, YAN Jia-hua, QIAO Yi-zhou, CAO Yuan-shuo, LIN Ying-hao, LI Jian-kang. The Preliminary Study of CdS Thin-film Prepared by Chemical Bath Deposition[J]. INFRARED, 2012, 33(11): 30.