提出一种大功率LED免铝基板封装方式，采用ANSYS有限元热分析软件对传统的铝基板封装和免铝基板封装的LED进行模拟对比分析。模拟结果表明: 两种封装结构的LED，其最高温度均出现在LED芯片处; 对于单颗功率1 W、3颗功率1 W和单颗功率3 W的器件，由于有效地简化了散热通道、大幅度降低了总热阻，采用免铝基板结构的最高温度分别降低了6.436，9.468，19.309 ℃。传统的铝基板封装即使选用热导率高达200 W/(m·K)的基板，其散热效果依旧略逊于免铝基板封装结构，且随着LED功率的增大，免铝基板的新型封装结构散热优势更加明显。本文的研究为解决大功率LED的散热问题和光色稳定性问题提供了一种新途径。

A novel method that without aluminum substrate high-power LED encapsulation is proposed. The thermal properties of traditional structure and this new structure is simulated by using finite element analysis software. The simulation results show that the maximum temperatures appear in the LED chips. Comparing with the traditional structure, the maximum temperatures of the new structure respectively lower 6.436, 9.468 and 19.309 ℃ when the input power is 1×1 W, 3×1 W and 1×3 W. Even if the thermal conductivity of substrate reaches as high as 200 W/(m·K), the heat dissipation effect is still better than the structure with aluminum substrate. The heat dissipation effect of the new structure is obviously superior to that of aluminum substrate structure. With the increase of input power, the advantage of the new structure is more remarkable. It provides a new way to solve the heat dissipation problem of high power LED.