半导体光电, 2012, 33 (6): 791, 网络出版: 2012-12-31
高速InP基半导体电光调制器行波电极结构研究
Design of Traveling-wave Electrodes for High-speed InP-based Semiconductor Electro-optic Modulators
电光调制器 行波电极 阻抗匹配 微波损耗 electro-optic modulator traveling-wave electrode impedance matching microwave loss
摘要
对PIN型和NIN型两种InP基Mach-Zehnder电光调制器的电极结构进行了数值仿真研究, 从而确定出适于这两种电光调制器的行波电极结构。仿真结果表明, NIN型电光调制器可采用简单的单臂类微带电极, 而PIN型电光调制器需采用周期容性负载电极, 以达到良好的阻抗匹配特性和传输特性。进一步地, 提出了将串联推挽式行波电极结构应用于PIN型电光调制器, 可以简化制作工艺并获得良好的微波特性。
Abstract
Traveling-wave electrode configurations suitable for PIN- and NIN-type InP-based Mach-Zehnder electro-optic modulators are studied through numerical simulations. The results indicate that good microwave performance can be secured for NIN-type modulator with microstrip electrodes and PIN-type modulator with capacitively-loaded traveling-wave electrodes. Meanwhile, a series push-pull electrode for PIN-type modulator is proposed to simplify the fabrication process as well as improving the microwave performance.
郭丽丽, 孙长征, 熊兵, 罗毅. 高速InP基半导体电光调制器行波电极结构研究[J]. 半导体光电, 2012, 33(6): 791. GUO Lili, SUN Changzheng, XIONG Bing, LUO Yi. Design of Traveling-wave Electrodes for High-speed InP-based Semiconductor Electro-optic Modulators[J]. Semiconductor Optoelectronics, 2012, 33(6): 791.
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