采用Afors-het软件模拟分析了结构为TCO/a-Si∶H(n)/a-Si∶H(i)/c-Si(p)/a-Si∶H(p+)/Ag的p型硅衬底异质结太阳电池的性能, 研究了各层厚度、带隙、掺杂浓度以及界面态密度等结构参数和物理参数对电池性能的影响。通过模拟优化, 结合理论分析和实际工艺, 得到合适的各结构参数取值。采用厚度薄且掺杂高的窗口层, 嵌入本征层以钝化异质结界面缺陷, 合理利用背场对于少子的背反作用, 获得了较佳的太阳电池综合性能: 开路电压Voc为678.9mV、短路电流密度Jsc为38.33mA/cm2、填充因子FF为84.05%、转换效率η为21.87%。

The performance of TCO/a-Si∶H(n)/a-Si∶H(i)/c-Si(p)/a-Si∶H(p+)/Ag heterojunction solar cells on p-type silicon substrates was simulated by Afors-het software. Optimal structural parameters of thickness, band gap, doping concentration and interface states density were obtained by the results of software optimization and theoretical analysis. The results indicate that well-performed heterojunction solar cells can be designed by using thin and high doping window layer, passivating the defect states of heterojunction interface with intrinsic layer, and making full use of the mirror effect of back surface field. The optimum performance parameters are Voc=678.9mV, Jsc=38.33mA/cm2, FF=84.05%, η=21.87%.