HgCdTe、QWIP和 InAs/GaSbⅡ类超晶格被公认是第三代红外焦平面探测器的首选。主要对比分析了 HgCdTe和 InAs/GaSbⅡ类超晶格红外探测器, InAs/GaSbⅡ类超晶格具有响应波段宽且精确可控、工作温度高、载流子寿命长、暗电流低和均匀性好等优点, 使其在甚长波、多色以及非制冷红外焦平面阵列等方面具有广阔的发展应用前景。

The HgCdTe photodiodes, quantum well infrared photodiodes(QWIP)and typeⅡ InAs/GaSb superlattice photodiodes have emerged as the first candidate for third generation infrared detectors. There are many advantages of typeⅡ InAs/GaSb superlattice photodiodes over the HgCdTe photodiodes, for example, a highly adjustable broad spectral response range, higher operating temperature, longer carrier lifetime, lower leakage current and greater uniformity. There will be potential applications in the future for typeⅡ InAs/GaSb superlattice photodiode in the very long wavelength infrared(VLWIR), multi-color and uncooled infrared Focal Plane Arrays.