强激光与粒子束, 2013, 25 (2): 505, 网络出版: 2013-01-07
2.0 μm 波段Sb基多量子阱材料的制备
Fabrication of 2.0 μm Sbbased multiquantumwell materials
摘要
采用分子束外延外延生长技术，优化InGaAsSb/AlGaAsSb多量子阱点材料的生长速率、生长温度和束流比等生长参数，获得了高质量的多量子阱材料。室温光荧光谱表明，材料的发光波长为2.0 μm左右。该结果表明,通过优化生长条件和结构参数制备的量子阱材料，可以获得良好的结构质量和光学特性。所制备的器件室温条件下输出功率22 mW，阈值电流300 mA。
Abstract
This paper studies parameters of InGaAsSb/AlGaAsSb multiquantumwell (MQW) materials grown by molecular beam epitaxy(MBE), including the growth rate, growth temperature and flux for high quality MQW materials, respectively. As well, characterization of the epilayers by Xray diffraction (XRD) indicates high uniformity and excellent crystalline quality with satellite peaks. Emitting wavelength is about 2.0 μm measured by photoluminescence(PL) at room temperature (RT). The excellent crystalline quality and optical characteristic are obtained through optimization of growth conditions and structure parameters.The threshold current of the fabricated device is about 300 mA, the output power is 22 mW at room temperature.
李占国, 尤明慧, 邓昀, 刘国军, 李林, 高欣, 曲轶, 王晓华. 2.0 μm 波段Sb基多量子阱材料的制备[J]. 强激光与粒子束, 2013, 25(2): 505. Li Zhanguo, You Minghui, Deng Yun, Liu Guojun, Li Lin, Gao Xin, Qu Yi, Wang Xiaohua. Fabrication of 2.0 μm Sbbased multiquantumwell materials[J]. High Power Laser and Particle Beams, 2013, 25(2): 505.
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