介绍了光抽运垂直外腔面发射激光器的材料增益特性，以InGaAs/AlGaAs应变量子阱系统为例，建立了将带边偏置、能带结构和材料增益系统结合起来的理论模型。用Model-Solid模型确定带边偏置比，然后采用导带抛物线近似及价带6×6 Luttinger哈密顿量精确计算了能带结构和材料增益。基于对材料增益特性的分析研究，优化设计了1 μm波段的量子阱有源区，分别对量子阱的阱宽、阱深和阱的构成形式进行了优化设计并得到了最优选择，为光抽运垂直外腔面发射激光器的优化设计提供了理论依据。

The gain characteristics of the optically pumped vertical external cavity surface emitting lasers is introduced in detail. To take the InGaAs/AlGaAs strained quantum wells as an example, a complete system model is established which considers all the effects of the band-edge offset, band structure and gain material. The Model-Solid model is used to determine the band-edge-offset ratios, and then the parabolic approximation of conduction band and the 6×6 Luttinger Hamiltonian of valence band are used to calculate the energy-band structure and material gain. Based on the analysis of the characteristics of material gain, the active region of a 1 μm wavelength band quantum well is optimized, and the quantum well width, well depth, and configuration of the well are respectively optimized, then the optimum selections of which are obtained. The calculated results provide a theoretical basis for optimized designing of optically pumped vertical external cavity surface emitting lasers.