能带值为0.5~0.85 eV材料的稀缺是多结太阳能电池面临的一个主要挑战，本文使用非真空的机械化学法合成了能带值为0.83 eV的Cu2SnS3化合物，使用印刷技术将其制备成吸收层薄膜，并采用superstrate太阳能电池结构(Mo/Cu2SnS3/In2S3/TiO2/FTO glass)对其光伏特性进行了研究.实验表明所制备的太阳能电池短路电流密度、开路电压、填充因子和转换效率分别为12.38 mA/cm2、320 mV、0.28和1.10%.此外，为更好地满足多结太阳能电池对电流匹配的需求，本文对所制备太阳能电池的Cu2SnS3/In2S3 p-n结进行了分析.通过在p-n结界面植入一层薄的疏松缓冲层，使调制后的太阳能电池短路电流密度从最初的12.38 mA/cm2增加到了23.15 mA/cm2，相应太阳能电池转换效率从1.1%增加到了1.92%.该p-n调制技术对印刷型薄膜太阳能电池具有重要借鉴意义.

The scarcity of materials with band gap value of 0.5~0.85 eV is one of the major challenges for the multi-junction solar cells. In this study, the compounds Cu2SnS3 with band gap of 0.83 eV is synthesized by non-vacuum mechanochemical method, and is prepared into absorber layer by non-vacuum printing technique. The photovoltaic properties of the Cu2SnS3 are studied by employing a superstrate solar cell structure of Mo/Cu2SnS3/In2S3/TiO2/FTO glass. Experiment result indicates that the short-circuit current density, open-circuit voltage, fill factor and conversion efficiency of the fabricated solar cell are 12.38 mA/cm2, 320 mV, 0.28% and 1.10%, respectively. Furthermore, to better meet the requirements of multi-junction solar cell on the current matching, the Cu2SnS3/In2S3 p-n junction of the fabricated solar cell is analyzed. A p-n modulation technique with a thin porous buffer layer inserted into the p-n junction interface is proposed. The results indicate that the technique can promote the short-circuit current density of the solar cell from initial 12.38 mA/cm2 to 23.15 mA/cm2, and the corresponding solar cell conversion efficiency from 1.1% to 1.92%. This p-n modulation technique can be an important reference to the printed thin film solar cells.