易于集成、高消光比是目前全光开关的研究目标。采用硅基串联双微环谐振腔的方案，双环半径均为10 μm，理论分析认为串联双微环谐振腔可以有效改善光开关的消光比，并在此基础上进一步研究了基于硅基串联双微环谐振腔热非线性效应全光开关的基本特性。实验中，通过易耦合的离面耦合方法，利用面内单光注入技术，得到串联双微环谐振腔同谐振波长处最大陷波深度为27 dB，并通过调节注入光功率，实验得到基于热非线性效应的最大开关消光比为20.2 dB，热非线性红移变化量为136.4 pm/mW；采用面内双光注入技术，测得开关时间分别为2.84 μs和3.04 μs，并与面内单光注入测试结果进行了对比分析。实验测试结果与理论分析相符，为高集成化、高性能光路由和光调制器提供可行的方案。

One of the major challenges in realizing all-optical switching is urgent demand for dense integration and high extinction ratio (ER). In this paper, all-optical switching in silicon-on-insulator (SOI) serially coupled double-ring resonator based on thermal nonlinear effect is proposed. The radii of double ring resonator are both 10 μm. Theoretically, switching ER is improved at the same resonance wavelength of serially coupled double-ring resonator. Then, basic characteristics of all-optical switching in serially coupled double-ring resonator based on thermal nonlinear effect are researched. In experiments, firstly measured by single pump injection technology with easily coupling surface grating coupler method, the highest notch of serially coupled double-ring resonator is 27 dB. And the highest ER is 20.2 dB based on thermal nonlinear effect by adjusting the power of injected light. The slope of resonant wavelength as a function of injected pump is 136.4 pm/mW. Secondly, switching time measured by two pump injection technology is 2.84 μs and 3.04 μs, respectively. The results which are in agreement with theory between single and two-pump-injection technology are compared and analyzed. Those provide efficient method for optical router and modulation with dense integration and high performance.