为了提高半导体激光器的光谱纯度、亮度和工作稳定性，对多环耦合结构的半导体激光器进行了研究。采用多环耦合与弯曲有源波导共端输出结构，使得环形结构激光器输出在光谱纯度、亮度和工作稳定性方面得到了大幅改善。器件水平远场发散角度为2.7°，输出功率达10 mW，在821 nm处的谱线宽度为0.26 nm，实现Q因子达2737。该多环耦合结构器件具有电流对光谱调制特性，调制范围接近15 nm，同时电流对谱线宽度也有一定的调制作用，调制能力在0.2 nm左右。优化后器件输出的谱线宽度变窄，达到0.2 nm，实现Q因子达4040。

To improve the spectral purity, brightness and stability of semiconductor lasers, multi-ring coupling structure of the semiconductor laser is investigated. Based on the structure of multi-ring coupling and output of the curved active waveguide, spectral purity brightness, and output stability of ring laser structure are greatly improved. The parallel far-field divergence angle of slow axis is up to 2.7° and output power of 10 mW is obtained. Spectral width reaches 0.26 nm at 821 nm, the Q factor is up to 2737. It is found that the multi-ring coupling structure laser device owns current modulation characteristics with its spectrum, whose modulation range is closed to 15 nm. Meanwhile, the operation current owns a certain modulation to spectral width, whose modulation capability is about 0.2 nm. The optimized multi-ring coupling structure laser output spectral width narrowed to 0.2 nm and a Q factor of 4040 is obtained.