光学学报, 2003, 23 (s1): 289, 网络出版: 2013-01-28
InGaAsP/InP DH Ridge Waveguide Phase Modulator with High Modulation Efficiency
InGaAsP/InP DH Ridge Waveguide Phase Modulator with High Modulation Efficiency
摘要
Abstract
The P-p-n-N InGaAsP/InP ridge waveguide phase modulator has been fabricated and investigated at a wavelength of 1550nm. The phase modulation efficiency measured by the Fabry-Perot resonance method is as high as 34°/V-mm for TE mode. The QEO effect becomes dominant from -4V to -8V.
Young Tae Byun, Hwa Sun Park, Sung Jin Kim, Deok Ha Woo, Jong Chang Yi, Yoshiaki Nakano. InGaAsP/InP DH Ridge Waveguide Phase Modulator with High Modulation Efficiency[J]. 光学学报, 2003, 23(s1): 289. Young Tae Byun, Hwa Sun Park, Sung Jin Kim, Deok Ha Woo, Jong Chang Yi, Yoshiaki Nakano. InGaAsP/InP DH Ridge Waveguide Phase Modulator with High Modulation Efficiency[J]. Acta Optica Sinica, 2003, 23(s1): 289.
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