1.3～1.55 μm GAInNAsSb Lasers

James S. Harris

光学学报, 2003, 23 (s1): 313, 网络出版: 2013-01-28

1.3～1.55 μm GAInNAsSb Lasers

James S. Harris ^*

作者单位

Solid State and Photonics Lab, Stanford University, Stanford, CA 94305-4075

摘要

Abstract

The realization of long wavelength lasers on GaAs provides the opportunity to produce both much lower cost vertical cavity lasers and high power lasers. Results of work on the GalnNAsSb system to realize such lasers are described.

PDF全文

James S. Harris. 1.3～1.55 μm GAInNAsSb Lasers[J]. 光学学报, 2003, 23(s1): 313. James S. Harris. 1.3～1.55 μm GAInNAsSb Lasers[J]. Acta Optica Sinica, 2003, 23(s1): 313.