光学学报, 2003, 23 (s1): 329, 网络出版: 2013-01-28  

Study of Mode Characteristics for Equilateral Triangle Semiconductor Microlasers

Study of Mode Characteristics for Equilateral Triangle Semiconductor Microlasers
作者单位
1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
2 State Key LabOTatory of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
摘要
Abstract
InGaAsP semiconductor ETR microlasers with side length of 5 and 10 |im are tabricated by ICP etching. The peaks in photoluininenscent spectra corresponding to longitudinal modes are observed with the interval consisting with the theoretical formulae.

Qiao-Yin Lu, Xiao-Hong Chen, Wei-Hua Guo, Li-Juan Yu, Yong-Zhen Huang, Jian Wang, Yi Luo. Study of Mode Characteristics for Equilateral Triangle Semiconductor Microlasers[J]. 光学学报, 2003, 23(s1): 329. Qiao-Yin Lu, Xiao-Hong Chen, Wei-Hua Guo, Li-Juan Yu, Yong-Zhen Huang, Jian Wang, Yi Luo. Study of Mode Characteristics for Equilateral Triangle Semiconductor Microlasers[J]. Acta Optica Sinica, 2003, 23(s1): 329.

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