InN-Based Ill-Nitrides; A New Emerging Material System for Application in Optical Communications

Ke Xu; Akihiko Yoshikawa

光学学报, 2003, 23 (s1): 441, 网络出版: 2013-01-28

InN-Based Ill-Nitrides; A New Emerging Material System for Application in Optical Communications

Ke Xu ^1,2,3Akihiko Yoshikawa ^1,2,3,*

作者单位

¹ Dcpaerment of Electronics and Mechanical Engineering, Chiba University, Japan

² Center for Frontier Electronics and Photonics, Chiba University VBL, Japan

³ CREST, JST 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan

摘要

Abstract

The fact that InN has a direct bandgap of ().75eV enables InN-based nitrides devices to cover the wavelength range from UV region to 1.8|im, therefore, emerging as a new material system for optical communication applications.

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Ke Xu, Akihiko Yoshikawa. InN-Based Ill-Nitrides; A New Emerging Material System for Application in Optical Communications[J]. 光学学报, 2003, 23(s1): 441. Ke Xu, Akihiko Yoshikawa. InN-Based Ill-Nitrides; A New Emerging Material System for Application in Optical Communications[J]. Acta Optica Sinica, 2003, 23(s1): 441.

InN-Based Ill-Nitrides; A New Emerging Material System for Application in Optical Communications

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