光学学报, 2003, 23 (s1): 451, 网络出版: 2013-01-28  

The Fabrication and Characterization of Polarization Insensitive Semiconductor Optical Amplifier

The Fabrication and Characterization of Polarization Insensitive Semiconductor Optical Amplifier
作者单位
State Key Lab. on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy ofSciences, Beijing, 100083, China
摘要
Abstract
An angled facet strained bulk InGaAs SOA has been designed and fabricated. A device with double-layer antireflection coatings had <2dB polarization sensitivity and <0.5dB gain ripple.

Lijuan Yu, Weihua Guo, Chunlin Han, Yong-Zhen Huang, Xiaoyu Ma, Manqing Tan. The Fabrication and Characterization of Polarization Insensitive Semiconductor Optical Amplifier[J]. 光学学报, 2003, 23(s1): 451. Lijuan Yu, Weihua Guo, Chunlin Han, Yong-Zhen Huang, Xiaoyu Ma, Manqing Tan. The Fabrication and Characterization of Polarization Insensitive Semiconductor Optical Amplifier[J]. Acta Optica Sinica, 2003, 23(s1): 451.

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