中国激光, 2004, 31 (s1): 323, 网络出版: 2013-01-29  

Er离子注入Al2O3光波导薄膜的发光特性研究

Photoluminescence of Er Ion Implanted Al2O3 Waveguides Film
作者单位
大连理工大学材料工程系表面工程研究室, 辽宁 大连 116024
摘要
采用溶胶-凝胶和离子注入复合工艺在氧化的Sio2/Si(100)基片上制备掺Er3+:Al2O3光学薄膜.900℃烧结,掺Er3+:Al2O3薄膜的相结构是γ-Al,Er)2O3和θ-(Al,Er)2O3的混合物.室温下测量不同注入剂量的掺Er3+:Al2O3光学薄膜的光致发光谱,均获得了中心波长为1.533 pm的发光曲线.900℃烧结制备掺EPr3+:Al23光学薄膜光致发光强度随着注入剂量从0.2×1016 cm-2增加到4×l016cm-2而逐渐增加.而1200℃烧结制备掺Er3+:Al2O3光学薄膜的光致发光强度随着掺杂浓度从0.2×1016 cm-2增加到4×1016grN-2先增加后减小.
Abstract
The Er3+-doped Al2O3 optical films have been prepared on the thermally oxidized SiO/Si (100) substrate by the Er ion implantation Al2O3 films, which were obtained by the sol-gel method with a clipping-coating technique, using the aluminium isopropoxide [Al(OC3H7)3]-derived ΑΙΑ sols. The phase structure, mixture of γ-(Al,Er)2O3 and θ-(Αl,Εr)2O3, was observed for the Er3+-doped Al2O3 films sintered at 900 V. The photoluminescence (PL) spectrum centered at 1.533 μm with the full width at half-maximum (FWHM) of 44 nm was observed for the Er3+-doped Al2O3 film with the Er ion implantation fluence of 4×1016 cm, which attributed to the intra-4f transition between the first excited (4I13/2) and the ground state (4I25/3) of Er3+. The PL intensity at 1.533 μm increased with increasing the Er ion implantation fluence from 0.2×1016 cm-2 to 4×1016 cm-2 for the Er3+-doped Al2O3 films sintered at 900 When the sintering temperature was increased to 1200 ℃, the PL intensity at 1.533 μm first increased, and then decreased with increasing the Er ion implantation fluence from 0.2×1016 cm-2 to 4×l016 cm-2.

王兴军, 王辉, 陈涛, 雷明凯. Er离子注入Al2O3光波导薄膜的发光特性研究[J]. 中国激光, 2004, 31(s1): 323. WANG Xing-jun, WANG Hui, CHEN Tao, LEI Ming-kai. Photoluminescence of Er Ion Implanted Al2O3 Waveguides Film[J]. Chinese Journal of Lasers, 2004, 31(s1): 323.

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