采用溶胶-凝胶(Sol-gel)法在热氧化的SiO2/Si(100)基片上提拉法制备掺EP:A12O3光学薄膜.采用扫描电镜(SEM)、原子力显微镜(ARM),X射线衍射分析(XRD)研究了掺Er3+:Al2O3光学薄膜的形貌、厚度以及结构等特性.结果表明,在氧化的SiO2/Si(100)基片上获得了厚度为1.2 μm,固溶Er3+的面心立方结构γ-(Al,Er)2O3和单斜结构θ-(A1,Er)2O3的薄膜.薄膜表面光滑、平整,无明显的表面缺陷.掺EP:Al2O3薄膜晶粒分布均匀,平均晶粒直径为50～200 m,表面起伏度为10～20 nm.测量了10 K下掺0.1 mo1%～1.5 mo1%Er3+:Al2O3光学薄膜的光致发光(PL)谱,获得了中心波长为1.533μm的发光曲线.PL强度随Er3+掺杂浓度的增加而下降,相应的半峰宽(FWHM)也从45 nm减小到36 nm.Sol-gel法制备掺Er3+:Al2O3/SiO2/Si光学薄膜满足有源光波导放大器基体材料的性能要求.

The Er3+-doped Al2O3 optical films have been prepared on thermally oxidized SiO2/Si(100) substrate by the sol-gel method with the dip-coating process, using the aluminium isopropoxide [Al(ОС3Н7)2]-derived Аl2О3 sols with the addition of erbium nitrate [Er(NO3)2·5H2O]. The surface morphology, thickness and structure of the Еr3+-doped Al2O3 films have been analyzed by the scanning electron microscope (SEM), atomic force microscope (AFM), and X-ray diffractometer (XRD). The even, smooth and compact surfaces of Еr3+-doped Al2O3 films were obtained The ciystal size of 50~200 nm was observed for the Er3+-doped Al2O3 films. The thickness of the 1 mol% Er3+-doped Al2O3 film for 9 layers sintered at 900 ℃ is about 1.2 μm under a constant withdrawn rate of 100 mm/min. The phase structure, mixture of γ-Аl2O3 and θ-Аl2О3 was observed for undoped Al2O3 film. The thin film exhibited (110) and (120) preferred orientation for γ-Al2O3 and θ-Αl2O3 phase, respectively. The addition of 1 mol-% Er3+ has slight influence on the phase structure and preferred orientation of Al2O3 film. The photoluminescence (PL) spectra of 0.1 mol-%~1.5 mol% Er3+-doped Al2O3 films were detected at the measurement temperature of 10 Κ The PL peak intensity at 1.533 μm decreased with the increase of the Er3+ doping concentration· The corresponding full width at half maximum decreased from 45 nm to 36 nm.