采用金属有机化学气相沉积法在蓝宝石衬底上制备Ga、P掺杂的ZnO薄膜, 分别采用X射线衍射、扫描电子显微镜、霍尔效应测试、光致发光谱对样品进行表征。通过Ga、P掺杂分别得到n、p型ZnO薄膜, n型ZnO薄膜的载流子浓度可以达到1×1019 cm-3, p型ZnO薄膜的载流子浓度达到1.66×1016 cm-3。 所制备的ZnO薄膜具有c轴择优生长取向, 并且p型ZnO薄膜具有较好的光致发光特性。

Gallium-doped zinc oxide (ZnO∶Ga) and phosphorus-doped zinc oxide (ZnO∶P) films were separately prepared on Al2O3 substrates by metal organic chemical vapor deposition (MOCVD) method. The microstructure, electrical and optical properties were studied by X-ray diffraction (XRD), scanning electron microscopy, Hall effect measurement, the room temperature photoluminescence (PL) spectrum, respectively. The n-type ZnO films with a carrier concentration of 1×1019 cm-3 and p-type films with carrier concentration of 1.66×1016 cm-3 were obtained. SEM images showed the films had highly oriented columnar structure. PL spectrum displayed p-type ZnO films showed good optical qualities.