采用脉冲髙斯激光光束Ζ扫描方法测Μ了用磁控共溅射技术制备的InP/SiO2纳米颗粒薄膜的非线性光学性质。测量结果表明, 在激光波长为585 nm(非共振)的条件下, 经310 ℃退火的薄膜的非线性折射率系数γ的大小为10^{-11} m2/W量级, 比块材InP晶体相应的数值提高了5个数量级。薄膜的光学非线性对退火温度相当敏感。光学非线性增强主要起因于光致载流子的强量子限制效应和大量的局域态的振子强度的增强。

The non-linear optical properties of InP/SiO2 nanogranular films fabricated by radio frequency magnetron co-sputtering technique have been investigated by z-scan technique using a single Gaussian beam of pulse dye laser. Results of the investigations show that the magnitude of the nonlinear refractive index y for the film annealed at 310 ℃ at wavelength of 585 nm (non-resonant) is the order of 10^{-11} m2/W, which is 5 orders of magnitude as large as those of bulk InP. The optical nonlinearity of the films is quite sensitive to the annealing temperature. The enhancement of optical nonlinearity of the films results from strong quantum confinement of the photo induced carriers and the enhancement of the oscillator strength of the localized states.