利用一种共蒸发及后退火的方法制备出包埋在氧化镁薄膜基质中的氧化锌量子点。经过退火之后进行的X射线衍射(XRD)实验表明了氧化锌的形成。在室温条件下, 经过900 ℃和1000 ℃退火的样品的光致发光(PL)谱中在375 nm附近表现出强的紫外光发射。从77 Κ到室温的变温光致发光谱的结果表明限制在氧化镁基质中的氧化锌量子点具有比较大的激子束缚能。此外,还讨论了退火温度和发光性质的关系。

Zinc oxide quantum dots (QDs) embedded in MgO thin film matrices have been prepared by a simple combination evaporation technique, in which electron beam evaporates MgO crystalline, simultaneously resist thermal evaporates high purity metal zinc in order to embed metal zinc atoms into MgO matrices. Post-annealing process in oxygen ambient at 500, 600, 700, 800, 900 and 1000 ℃ for one hour, respectively, was proceeded in order to transform metal zinc atom into zinc oxide. After the post-annealing process, X-ray diffraction (XRD) spectra were used to identify the formation of ZnO. A strong ultraviolet emission band has been observed at room temperature in the photoluminescence (PL) spectra for the samples annealed at 900 and 1000. The PL spectra measured at 77 Κ to room temperature show little change in the peak intensity and the peak energy, which indicates that ZnO QDs strongly confined by MgO matrices have been fabricated through this simple method. The dependence of photoluminescence properties of ZnO quantum dots on the annealing temperature is discussed.