在利用高密度线性阵列探测器成像时, 探测阵列单元间的串扰将直接影响器件的成像质量。文章对厚度为100μm的背照式PIN光电探测器线性阵列的电串扰特性进行了分析, 通过Silvaco TCAD器件仿真软件对阵列的暗电流和光电流进行了仿真, 分析了像元间的电串扰特性, 同时对比分析了保护环结构对器件的暗电流和电串扰特性的影响。仿真结果表明, 保护环结构器件的暗电流和电串扰性能均优于无保护环的结构, 在有保护环时PIN器件的串扰是无保护环结构的1/5。

Crosstalk is the key parameter affecting the imaging quality of high-density photodiode array for imaging applications. The characteristics of electrical crosstalk of the 100μm back-illuminated PIN linear array were analyzed, and simulations on the dark current and photo current of the array cells were carried out with Silvaco TCAD software. The effects of guard ring on the dark current and electric crosstalk of the devices were studied comparatively. The results show that the dark current of PIN photodiode arrays with guard ring is superior to that of the devices with no guard ring structure; and the electrical crosstalk of the PIN arrays with guard ring is only 1/5 of that of PIN array with no guard ring.