针对不能在片测量的光探测器芯片, 本文提出了一个简单而有效的实验方案来提取其等效电路模型的高频电参量.首先设计了和微波探针匹配的共面波导微带线, 测量其输出反射系数, 测试结果与理论设计符合很好;然后将芯片装载到微带线上, 测量包含光探测器的整个测试结构的输出反射系数.仿真中涉及光探测器测试结构的等效电路模型, 包含光探测器、键合金丝和共面波导微带线等因素.通过拟合已测的整个测试结构的输出反射系数, 提取了光探测器的高频电参量.

For no on-wafer measurement of photodetectors (PDs), a simple and effective method to determine high frequency electrical parameters of the equivalent circuit model is presented. Firstly, a coplanar waveguide (CPW) microstrip matched with the microwave probe is designed, and the measured output reflection coefficient shows good agreement with the theoretical design. The chip is mounted on the CPW microstrip and the output reflection coefficient of the PD test-fixture is measured. The equivalent circuit model including the PD, the bondwire and the CPW elements is simulated. By fitting the measured output reflection coefficient of the test-fixture, high frequency electrical parameters of the PD are extracted.