强激光与粒子束, 2013, 25 (3): 537, 网络出版: 2013-03-05
高重复频率脉冲功率技术及其应用:(4)半导体开关的特长与局限性
Repetition rate pulsed power technology and its applications: (iv) Advantage and limitation of semiconductor switches
脉冲功率 高电压 短脉冲 高功率脉冲开关 电力电子 气体放电 pulsed power high voltage short pulse high-power pulsed switch power electronics gas discharge
摘要
综合叙述了功率半导体开关在高重复频率脉冲功率技术中的意义和使用方法。并通过与传统脉冲功率开关的比较, 归纳了半导体开关的特长和缺陷。在举例说明了半导体开关的控制方法以后, 介绍了几种有效提高半导体开关工作能力的电路方法, 包括采用多个器件的串联与并联、电压叠加、开关器件的组合与互补等方法。
Abstract
Power semiconductor devices have been used for repetitive pulsed power generation, due to their advantages in stability, reliability, and lifetime. On the other hand, their limitations in power capability and noise vulnerability are expected to be overcome by using various techniques in gate control and circuit configuration. In this paper, some pulse circuit methods to improve the working ability of semiconductor switches are introduced, including using a number of devices in series and parallel, voltage superposition, combination and complementation of switching devices.
江伟华. 高重复频率脉冲功率技术及其应用:(4)半导体开关的特长与局限性[J]. 强激光与粒子束, 2013, 25(3): 537. Jiang Weihua. Repetition rate pulsed power technology and its applications: (iv) Advantage and limitation of semiconductor switches[J]. High Power Laser and Particle Beams, 2013, 25(3): 537.