成功地控制了自组织三维GaN小岛的外延生长，在其上面可形成多个非极性小面侧壁。以此作为一个理想的基底，在非极性小面上设计制备了InGaN/GaN多量子阱发光有缘层结构。通过透射电子显微镜(TEM)制样和微观结构分析，确定了GaN小岛的生长特性和小面形成特性，并利用阴极荧光光谱对InGaN/GaN多量子阱的发光特性进行比较和讨论。结果表明，单一小岛可有效实现混合白色发光（蓝色、绿色和红色），经过确认发现，半极性小面上的InGaN/GaN量子阱结构为明亮多色发光的主要区域。进一步小面构成的量子阱结构控制，可有效地调整白光质量，并对新一代白光照明提供新的方向。

The controllable growth of self-organized 3D semi-polar faceted GaN islands is reported, which performs as an ideal template for the fabrication of semi-polar InGaN/GaN light-emitting quantum wells on the sidewalls. Special transmission electron microscope (TEM) sample preparation is employed to analyse the microstructure and growth mechanism of the multi quantum wells on the sidewall facets. Together with cathodoluminescence, the results show that the mixed white light (blue, green and red) emission in a single island can be achieved and the semi-polar faceted InGaN/GaN quantum wells act as the main region for the bright multi-color light emitting. Further optimization of the facet structure will improve the flexibility of light emission and provide a new method for the next generation of white lighting.