光谱学与光谱分析, 2013, 33 (2): 527, 网络出版: 2013-03-27
激光烧蚀硅过程中的元素沉积规律,
The Deposition of Elements in the Process of Laser Ablation of Silicon
摘要
激光在半导体加工行业(特别是硅材料)具有广阔的应用前景。 激光与硅作用过程极其复杂, 本文主要研究了紫外激光脉冲对硅进行烧蚀的形貌特征以及环境气体的影响。 研究表明, 紫外激光烧蚀硅产生激光等离子体的电离效应对烧蚀特性起了决定性的影响: 气化、 电离物的产生为材料的去除提供了条件, 同时激光等离子体冲击波会把相变材料有效排出, 激光等离子体光谱的电离效应则把空气中的氧元素有效电离并沉积到烧蚀产物中。
Abstract
Laser processing in the semiconductor industry (especially silicon material) has broad application prospects. The interaction between the laser and silicon is complex, and the present paper mainly studied the silicon morphology in UV laser ablation and the influence law of ambient gas. Studies have shown that the laser plasma ionization effect of silicon in the UV laser ablation has a decisive impact: the removal of the material becomes possible because of generating gasification and ionization, laser plasma shock wave can make phase transition material discharge effectively, and laser plasma spectroscopy ionization effect can make the oxygen elements in the air ionize and deposit effectively.
王绍朋, 冯国英, 段涛, 韩敬华. 激光烧蚀硅过程中的元素沉积规律,[J]. 光谱学与光谱分析, 2013, 33(2): 527. WANG Shao-peng, FENG Guo-ying, DUAN Tao, HAN Jing-hua. The Deposition of Elements in the Process of Laser Ablation of Silicon[J]. Spectroscopy and Spectral Analysis, 2013, 33(2): 527.