利用Omni-λ300系列光栅光谱仪、 CCD数据采集和处理系统以及光纤导光系统等构成的等离子体光谱分析系统, 实现了实时获取射频磁控溅射过程中等离子体光谱, 分别对NiTa, TiAl陶瓷靶, NiAl, TiAl合金靶四种靶材的磁控溅射过程产生的等离子体进行监测, 以TaⅡ333.991 nm, NiⅠ362.473 nm, AlⅠ396.153 nm和TiⅠ398.176 nm为分析线, 获得了分析谱线强度随时间的变化规律, 并以此为依据确定了预溅射时间, 同时研究了不同溅射功率和压强对预溅射时间的影响。

A plasma analysis system comprised of Omni-λ300 series grating spectrometer, CCD data acquisition system and optical fiber transmission system was utilized in the present paper to realize the real-time acquisition of plasma emission spectra during the process of radio frequency (RF) magnetron sputtering. The plasma emission spectra produced by NiTa, TiAl ceramic targets and NiAl, TiAl alloy targets were monitored respectively, in addition, the behavior of analysis lines of TaⅡ333.991 nm, NiⅠ362.473 nm, AlⅠ396.153 nm and TiⅠ398.176 nm with time was obtained, according to which the time of pre-sputtering of the four kinds of target materials was fixed. At the same time, for the TiAl alloy target as the research object, the influence of different powers and pressures on the time of pre-sputtering was studied.