对离子注入法制备的u-, n-和p-GaN∶Er三种类型的薄膜样品进行了Raman光谱分析。 Er+注入GaN样品后新出现了293, 362和670 cm-1等波数的Raman峰, 其中293 cm-1处的Raman峰被指认为无序激活的Raman散射(DARS), 362 cm-1和670 cm-1处的Raman峰可能与离子注入后形成的GaN晶格缺陷有关。 上述GaN∶Er样品在800℃退火前后的E2(high)特征峰均向高频方向移动, 表明薄膜晶格中均存在着压应力。 采用洛伦兹拟合分析了Raman光谱中组成A1(LO)模式峰的未耦合LO模与等离子体激元耦合模LPP+在不同样品中的出现情况, 定性指出了GaN∶Er系列样品中载流子浓度的变化规律。

U-, n- and p-GaN∶Er films were prepared by ion implantation method. Three carrier types of samples were studied by Raman spectra analysis. After Er+ ion implantation into GaN samples, new Raman peaks at wavenumber of 293, 362和670 cm-1 appeared, where 293 cm-1 was considered as disordered activation of Raman scattering (DARS), 362 and 670 cm-1 may be associated with GaN lattice defects formed after ion implantation. The E2 (high) characteristic peak moves to the high frequency before and after GaN∶Er samples annealing at 800 ℃, indicating that GaN lattice is under the compressive stress. The Lorenz fitting was used to analysed the occurrences of A1(LO) peak in different samples which is composed of the uncoupled mode LO and the plasmon coupling mode LPP+, qualitatively pointing out the carrier concentration variation of a series of GaN∶Er samples.