发光学报, 2013, 34 (3): 356, 网络出版: 2013-04-07   

Al/ZnO∶Al薄膜结构的荧光增强效应

Emission Enhancement from Al-capped ZnO∶Al Films
作者单位
1 浙江工业大学之江学院 理学系, 浙江 杭州310024
2 浙江大学物理系 硅材料国家重点实验室, 浙江 杭州310027
摘要
利用物理气相沉积设备制备了Al/ZnO∶Al薄膜样品, 研究了该薄膜结构的发光特性。结果表明, 在ZnO∶Al薄膜表面镀一层Al岛薄膜可以增强其带边荧光, 同时在475 nm附近产生蓝光峰。通过在Al岛薄膜和ZnO∶Al薄膜之间引入一层5 nm的Ta2O5绝缘层可以使ZnO∶Al薄膜的带边荧光和蓝光显著增强, 并随着Ta2O5绝缘层厚度的增大而减弱。通过对Al/ZnO∶Al样品进行退火处理可以使带边荧光和蓝光峰分别增强9倍和83倍。基于局域表面等离子体共振理论, 计算了Al/ZnO∶Al纳米结构的光学散射和吸收截面曲线。实验结果与理论计算相一致。
Abstract
Al/ZnO∶Al film structures were fabricated by physical vapor deposition, and the optical properties of which were studied. It was found that Al capped ZnO∶Al can enhance the band gap emission and generate blue emission (475 nm). When a 5 nm Ta2O5 spacer was inserted between Al and ZnO∶Al, further enhancements were observed for both band gap and blue emission. The enhancement raito decreases with the thickness of the Ta2O5 spacer. Moreover, the band-edge emission and blue emission increase with annealing temperature and the max enhancement ratio is 9 and 83, respectively. According to localized surface plasmon resonance theory, the scattering and absorption cross sections of Al/ZnO∶Al were calculated. The theoretical results can interpret the experimental phenomena reasonably.

徐天宁, 卢忠, 隋成华, 吴惠桢. Al/ZnO∶Al薄膜结构的荧光增强效应[J]. 发光学报, 2013, 34(3): 356. XU Tian-ning, LU Zhong, SUI Chen-hua, WU Hui-zhen. Emission Enhancement from Al-capped ZnO∶Al Films[J]. Chinese Journal of Luminescence, 2013, 34(3): 356.

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