液晶与显示, 2013, 28 (2): 210, 网络出版: 2013-04-15   

Tips-Pentacene OTFT电极接触电阻的研究

Contact Resistance of Electrodes in Tips-Pentacene OTFTs
作者单位
江南大学 电子工程系 轻工过程先进控制教育部重点实验室, 江苏 无锡 214122
摘要
采用转移线性法分析了以PVP为栅绝缘层、以Tips-pentacene为有源层的有机薄膜晶体管(OTFT)电极与有源层间的接触电阻, 其中介电层和有源层均采用旋涂法制备, 银电极采用喷墨印刷法制备。沟道长度分别取200,250,300 μm和400 μm, 有源层退火时间分别为2 h,6 h和10 h, 提取到的3种不同退火时间的OTFT的接触电阻分别为8 MΩ,4.5 MΩ和3 MΩ, 退火10 h的OTFT的接触电阻较小主要是因为较长时间的退火使得Tips-pentacene有源层中的杂质较少, 电极和有源层之间的接触势垒较小。
Abstract
This paper analyzed the contact resistance between inkjet-printed silver source/drain (S/D) electrodes and organic semiconductor layer of Organic Thin-film Transistors(OTFTs) using transmission line method(TLM). Spin-coated PVP thin-film and Tips-pentacene thin-film were used as gate dielectric layer and semiconductor layer, respectively. S/D electrodes with four different channel lengths of 200,250,300 μm and 400 μm were inkjet-printed,and the annealed time of different semiconductor layers was 2 h,6 h and 10 h, respectively. The extracted contact resistances were 8 MΩ,4.5 MΩ and 3 MΩ for OTFTs with three different kinds of annealed time, respectively. Lower contact resistance for OTFTs with annealed time of 10 h can be explained by the fact that longtime annealing can reduce the impurity in the semiconductor layer and lower the contact barrier between electrodes and semiconductor layer.

刘欢, 余屯, 邱禹, 钟传杰. Tips-Pentacene OTFT电极接触电阻的研究[J]. 液晶与显示, 2013, 28(2): 210. LIU Huan, YU Tun, QIU Yu, ZHONG Chuan-jie. Contact Resistance of Electrodes in Tips-Pentacene OTFTs[J]. Chinese Journal of Liquid Crystals and Displays, 2013, 28(2): 210.

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