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沉积参数对射频磁控溅射制备的碲锌镉薄膜的影响

Effects of deposition parameters on Cd1-xZnxTe films prepared by RF magnetron sputtering

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摘要

采用Cd0.96Zn0.04Te靶, 利用射频磁控溅射制备碲锌镉薄膜, 通过改变基片温度、溅射功率和工作气压, 制得不同的碲锌镉薄膜.将制备的碲锌镉薄膜放置在高纯空气气氛中, 在473 K温度下退火.利用台阶仪、分光光度计、XRD和SEM测试设备表征, 结果表明, 通过退火和改变沉积参数, 可以制备出禁带宽度在1.45 ~2.02 eV之间调节的碲锌镉薄膜.

Abstract

Cd1-xZnx Te films were deposited by RF magnetron sputtering from Cd0.96 Zn0.04Te crystals target at different substrate temperatures, RF powers and working pressures. After deposition, the samples were annealed in high purity air at 473 K. The films were characterized using step profilometer, UV-VIS-NIR spectrophotometer, XRD and SEM. Depending on the deposition parameters and annealing, the values of the band gap of the CZT films varied between 1.45 and 2.02 eV.

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中图分类号:O484.1

DOI:10.3724/sp.j.1010.2013.00097

基金项目:Supported by the Knowledge Innovation Program of Chinese Academy of Sciences (KGCX2-YW-347)

收稿日期:2012-08-13

修改稿日期:2012-12-10

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作者单位    点击查看

曹鸿:中国科学院上海技术物理研究所 红外物理国家重点实验室, 上海 200083上海太阳能电池研究与发展中心, 上海 201201
褚君浩:中国科学院上海技术物理研究所 红外物理国家重点实验室, 上海 200083上海太阳能电池研究与发展中心, 上海 201201
王善力:上海太阳能电池研究与发展中心, 上海 201201
邬云骅:上海太阳能电池研究与发展中心, 上海 201201
张传军:中国科学院上海技术物理研究所 红外物理国家重点实验室, 上海 200083上海太阳能电池研究与发展中心, 上海 201201

联系人作者:CAO Hong(hongcao0606@yahoo.com.cn)

备注:CAO Hong(1977-), female, Ph.D. Research field focus on photovoltaic structure and characteristics.

【1】Zeng D M, Jie W Q, Zhou H, et al. Effects of deposition temperatures on structure and physical properties of Cd1-xZnxTe films prepared by RF magnetron sputtering[J].Nuclear Instruments and Methods in Physics Research Section A, 2010,614(1): 68-71.

【2】Panin G N, Diaz-Guerra C, Piqueras J. Electron beam induced current and scanning tunnelling spectroscopy correlative study of CdxHg1-xTe and CdTe crystals[J]. Semiconductor Science and Technology, 1998, 13(6):576-582.

【3】Singh M, Al-Dayeh L, Patel P et al. Correction of head movements in multi-slice EPI and single-slice gradient-echo functional MRI [J]. IEEE Trans. Nucl. Sci, 1998,45(4): 2162-2167.

【4】van Pamelen M J A, Budtz-Jorgensen C.Novel electrode geometry to improve performance of CdZnTe detectors[J]. Nuclear Instruments and Methods in Physics Research Section A, 1998,403(2-3):390-398.

【5】Banerjee P S, Ganguly R, Ghosh B.Optical properties of Cd1-xZnxTe thin films fabricated through sputtering of compound semiconductors[J]. Applied Surface Science, 2009,256(1):213-216.

【6】Becerril M, Picos-Vega A, Zelaya-Angel O. Studies on In doped CdTe co-sputtered films[J]. Journal of Physics and Chemistry of Solids,1999,60(2):257-265.

【7】Rusu G G., Rusu M, Girtan M. Optical characterization of vacuum evaporated CdZnTe thin films deposited by a multilayer method[J]. Vacuum, 2007,81(11-12):1476-1479.

【8】Swanepoel R. Determination of the thickness and optical constants of amorphous silicon[J]. J.Phys. E:Sci.Instrum, 1983,16(12):1214-1222.

【9】Dwivedi D K, Dayashankar, Dubey M.Synthesis, characterization and electrical properties of ZnTe nanoparticles[J]. Journal of Ovonic Research, 2009, 5(1): 35-41.

【10】Winters H F, Sigmund P. Sputtering of chemisorbed gas (nitrogen on tungsten) by low‐energy ions[J]. J Appl Phys, 1974,45(11):4760-4767.

【11】Cousins M A, Durose K. Grain structure of CdTe in CSS-deposited CdTe/CdS solar cells[J]. Thin Solid Films, 2000,361-362: 253-257.

【12】Samanta B. Classic data structures[M]. Prentice-Hall of India Pvt.Ltd, 1995:339-343.

引用该论文

CAO Hong,CHU Jun-Hao,WANG Shan-Li,WU Yun-Hua,ZHANG Chuan-Jun. Effects of deposition parameters on Cd1-xZnxTe films prepared by RF magnetron sputtering[J]. Journal of Infrared and Millimeter Waves, 2013, 32(2): 97-101

曹鸿,褚君浩,王善力,邬云骅,张传军. 沉积参数对射频磁控溅射制备的碲锌镉薄膜的影响[J]. 红外与毫米波学报, 2013, 32(2): 97-101

被引情况

【1】王忆锋. 2013年的中国红外技术(上). 红外技术, 2014, 36(1): 10-21

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