利用GaAs肖特基平面二极管, 基于石英薄膜电路工艺, 采用场和路相结合的综合分析方法, 研制出了两个不同频率带宽的倍频器.在场软件中, 二极管非线性结采用集总端口模拟, 以提取二极管的嵌入阻抗, 设计二倍频器的无源匹配电路, 优化倍频的整体电路性能, 提取相应的S参数文件, 分析倍频器的效率.150 GHz二倍频器在149.2 GHz测得最高倍频效率7.5%, 在147.4～152 GHz效率典型值为6.0%; 180 GHz二倍频器在170 GHz测得最高倍频效率14.8%, 在150～200 GHz效率典型值为8.0%.

We report on the design and evaluation of two frequency bandwidth multiplying sources with planar Schottky diodes mounted on quartz thin film circuit. Novel co-simulation approach is used. Full-wave analysis is utilized to find diode deembedding impedances with lumped port to model the nonlinear junction. The doubler circuit is divided into several matching parts for ease of design. Individual parts of the doubler are independently designed and then these parts are combined and optimized simultaneously. The exported S-parameters of the whole circuit are used for multiplying efficiency analysis. For the 150 GHz doubler, the highest measured efficiency is 7.5% at 149.2 GHz and the typical efficiency is 6.0% in 147.4～152 GHz. As for the 180 GHz doubler, the highest measured efficiency is 14.8% at 170 GHz and the typical value in 150～200 GHz is 8.0%.