红外与毫米波学报, 2013, 32 (2): 118, 网络出版: 2013-04-18
基于InP衬底的晶格失配In0.68Ga0.32As的MOCVD生长及其特性研究
Characterization of the lattice mismatched In0.68Ga0.32As Material Grown on InP substrate by MOCVD
摘要
采用MOCVD生长技术在InP衬底上成功实现了晶格失配的3 μm In0.68Ga0.32As薄膜生长.通过As组分的改变, 利用张应变和压应变交替补偿的InAsxP1-x应变缓冲层结构来释放由于晶格失配所产生的应力, 在InP衬底上得到了与In0.68Ga0.32As晶格匹配的InAsxP1-x“虚拟”衬底, 通过对缓冲层厚度的优化, 使应力能够在“虚拟”衬底上完全豫弛.通过原子力显微镜(AFM)、高分辨XRD、透射电镜(TEM)和光致发光(PL)等测试分析表明, 这种释放应力的方法能够有效提高In0.68Ga0.32As外延层的晶体质量.
Abstract
The lattice mismatched In0.68 Ga0.32 As materials were grown on InP substrate by MOCVD technology. InAsxP1-x metamorphic buffer layer structures with various As compositions were grown on InP substrates, which forms an alternative tension and strain offset buffer structure , In this way, we got a strain relaxed InAsxP1-x "virtual" substrate, which is lattice matched to In0.68 Ga0.32 As .With an optimized thickness of the buffer layer,the strain was completely relaxed in the "virtual" substrate. The analysis of AFM, HRXRD ,TEM and photoluminescence(PL) indicated that this method can effectively improve the quality of the In0.68 Ga0.32 As material.
朱亚旗, 陈治明, 陆书龙, 季莲, 赵勇明, 谭明. 基于InP衬底的晶格失配In0.68Ga0.32As的MOCVD生长及其特性研究[J]. 红外与毫米波学报, 2013, 32(2): 118. ZHU Ya-Qi, CHEN Zhi-Ming, LU Shu-Long, JI Lian, ZHAO Yong-Ming, TAN Ming. Characterization of the lattice mismatched In0.68Ga0.32As Material Grown on InP substrate by MOCVD[J]. Journal of Infrared and Millimeter Waves, 2013, 32(2): 118.
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