根据 HgCdTe材料特性和 p-on-n HgCdTe红外探测器结构, 建立了 p-on-n HgCdTe红外探测器三维数理模型。通过对三维理论模型的求解, 得到探测器内部载流子的输运特性, 实现了对不同波段、不同工作温度 p-on-n HgCdTe红外探测器探测率的理论计算。计算结果表明: p-on-n HgCdTe红外探测器优异的高灵敏度和高温特性, 能在红外短波、中波和长波 3个波段上全面满足未来红外系统对高性能红外探测器的需求。

Based on the properties of HgCdTe materials and the physics of the p-on-n HgCdTe detector, a 3-D theoretical detector modeling and calculation were carried out. The p-on-n HgCdTe detector performances in short, middle and long wavelengths were calculated in terms of detectivity versus device working temperatures with cut-off response at 3, 5, and 10.5 μm, respectively. The results show that the performance of p-on-n HgCdTe detectors can meet the requirements of future high-end infrared system for high sensitivity and high working temperature detectors in all short, middle and long wavelengths.