半导体光电, 2013, 34 (2): 221, 网络出版: 2013-05-24
大应变InGaAs/GaAs/AlGaAs微带超晶格中波红外QWIP的MOCVD生长
Growth of Highly Strained InGaAs/GaAs/AlGaAs Mini-band Supper-lattices for Middle Wavelength Infrared QWIP Detectors
大应变 微带超晶格结构 量子阱红外探测器 InGaAs/GaAs InGaAs/GaAs highly strained mini-band supper-lattices QWIP MOCVD MOCVD
摘要
基于中波红外(峰值响应波长4.5μm)量子阱红外探测器QWIP进行了大应变In0.34Ga0.66As/ GaAs/Al0.35Ga0.65As微带超晶格结构的MOCVD外延生长研究。通过对生长温度、生长速率、Ⅴ/Ⅲ比以及界面生长中断时间等生长参数的系统优化, 获得了高质量的外延材料。
Abstract
Presented was the successful epitaxial growth of highly strained In0.34Ga0.66As/GaAs/Al0.35Ga0.65As mini-band supper-lattices for middle wavelength infrared quantum well infrared photodetector(QWIP) by low-pressure metal-organic chemical vapor deposition (MOCVD). By optimization of the growth parameters such as temperature, growth rate, Ⅴ/Ⅲ ratio, and interruption time of interface, excellent crystal quality of epitaxial materials was attained.
周勇, 孙迎波, 周勋, 刘万清, 杨晓波. 大应变InGaAs/GaAs/AlGaAs微带超晶格中波红外QWIP的MOCVD生长[J]. 半导体光电, 2013, 34(2): 221. ZHOU Yong, SUN Yingbo, ZHOU Xun, LIU Wanqing, YANG Xiaobo. Growth of Highly Strained InGaAs/GaAs/AlGaAs Mini-band Supper-lattices for Middle Wavelength Infrared QWIP Detectors[J]. Semiconductor Optoelectronics, 2013, 34(2): 221.
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