中国激光, 2013, 40 (6): 0602010, 网络出版: 2013-05-30
914 nm LD端面抽运Nd:YVO4 100 kHz皮秒再生放大器 
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100 kHz Nd:YVO4 Picosecond Regenerative Amplifier End-Pumped by 914 nm Laser Diode
激光技术 全固态激光器 再生放大技术 皮秒脉冲 Nd:YVO4晶体 914 nm波长 laser technique all-solid-state laser regeneration amplifier pico-second pulse Nd:YVO4 crystal 914 nm wavelength
摘要
采用Nd:YVO4晶体带内抽运波长914 nm，降低激光二极管(LD)连续抽运时晶体的热负荷和端面热应力，提高高重复频率Nd:YVO4皮秒再生放大器输出性能。研究分析了普克尔盒加压脉宽对工作频率为100 kHz的Nd:YVO4再生放大器输出脉冲稳定性的影响，在吸收914 nm抽运功率为68 W，通过控制普克尔盒加压脉宽，实现了对单脉冲能量为1 nJ、脉宽为5.7 ps、频率为42.7 MHz的全固态Nd:YVO4半导体可饱和吸收镜(SESAM)锁模种子激光脉冲的稳定的100 kHz皮秒激光再生放大，输出平均功率为21.2 W。
Abstract
914 nm wavelength in-band pumping of Nd:YVO4 reduces crystal thermal load and end-surface thermal stress, then the performance of Nd:YVO4 regenerative amplifier is enhanced at high repetition rate. The influence of high-voltage-duration applied to Pockel-cell on Nd:YVO4 regenerative amplifier with output pulse stability of 100 kHz is investigated in detail. When 68 W pumping power at 914 nm center wavelength is absorbed by the Nd:YVO4 crystal and appropriated high-voltage-duration is applied to Pockel-cell, the Nd:YVO4 regenerative amplifier that produces stable 21.2 W average power at 100 kHz repetition rate is seeded by a low power of 1 nJ and 5.7 ps duration semiconductor saturable absorber mirror (SESAM) mode-locked Nd:YVO4 laser with repetition rate of 42.7 MHz.
陈檬, 常亮, 杨超, 陈立元, 李港. 914 nm LD端面抽运Nd:YVO4 100 kHz皮秒再生放大器[J]. 中国激光, 2013, 40(6): 0602010. Chen Meng, Chang Liang, Yang Chao, Chen Liyuan, Li Gang. 100 kHz Nd:YVO4 Picosecond Regenerative Amplifier End-Pumped by 914 nm Laser Diode[J]. Chinese Journal of Lasers, 2013, 40(6): 0602010.
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