Chinese Optics Letters, 2013, 11 (s1): S10604, Published Online: Jun. 10, 2013
Interface engineering to decrease interdif fusion and improve thermal stability of EUV multilayer
Abstract
We use interface engineering technology to obtain high interface quality of extreme ultraviolet (EUV) multilayer. By inserting ultrathin (<0.5 nm) B4C layer between Mo and Si layers in Mo/Si multilayer, the interdiffusion in the multilayer is decreased obviously and the reflectivity can be estimated to increase by 2%. By inserting a new inert material barrer between Mo and Si layers, the thermal stability of new forming Mo/X/Si/X multilayer is increased significantly. The multilayer is annealed at 500 oC for 100 h with the fluctuation of period thickness smaller than 0.1 nm, and the high resolution transmission electron microscopy image also shows that the mirostructure of the multilayer is not changed obviously.
Bo Yu, Shangqi Kuang, Chun Li, Chunshui Jin. Interface engineering to decrease interdif fusion and improve thermal stability of EUV multilayer[J]. Chinese Optics Letters, 2013, 11(s1): S10604.