红外与毫米波学报, 2013, 32 (3): 193, 网络出版: 2013-06-25   

有效跨导为1052 mS/mm的高性能InP基In0.52Al0.48As/In0.53Ga0.47As HEMTs

High performance InP-based In0.52Al0.48As/In0.53Ga0.47As HEMTs with extrinsic transconductance of 1052 mS/mm
作者单位
1 西安电子科技大学 微电子学院 ,陕西 西安710071
2 中国科学院微电子研究所,北京100029
摘要
成功研制了栅长为0.15 μm、栅宽为2×50 μm、源漏间距为2 μm 的InP 基In0.52Al0.48As/In0.53Ga0.47As高电子迁移率器件.室温下,当器件VDS为1.7 V、VGS为0.1 V时,其有效跨导达到了1 052 mS/mm.传输线方法(TLM)测试显示器件的接触电阻为0.032 Ω·mm,器件欧姆接触电阻率为1.03×10-7 Ω·cm-2. 正是良好的欧姆接触及其短的源漏间距减小了源电阻,进而使得有效跨导比较大.器件有比较好的射频特性.从100 MHz到40 GHz, S参数外推出来的fT 和fmax分别为151 GHz和303 GHz.所报道的HEMT器件非常适合毫米波段集成电路的研制.
Abstract
0.15 μm gate-length InP-based In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors (HEMTs) were successfully fabricated with gate-width of 2×50 μm and source-drain space of 2 μm. The maximum extrinsic transconductance (gmext) of 1 052 mS/mm was obtained under gate-source voltage (VGS) of 0.1 V and drain-source voltage (VDS) of 1.7 V at room temperature. Transmission Line Method (TLM) measurements revealed the contact resistance of 0.032 Ω·mm and the specific contact resistivity of 1.03×10-7 Ω·cm-2 on linear TLM patterns. Thus, markedly enhanced gmext was achieved by the superb Ohmic contact and the short source-drain space for minimizing series source resistance. These devices also demonstrated excellent RF characteristics. The fT and fmax extrapolated using the S-parameters measured from 100 MHz to 40 GHz were 151 GHz and 303 GHz, respectively. The HEMTs were promising for millimeter-wave band integrated circuits.

钟英辉, 王显泰, 苏永波, 曹玉雄, 张玉明, 刘新宇, 金智. 有效跨导为1052 mS/mm的高性能InP基In0.52Al0.48As/In0.53Ga0.47As HEMTs[J]. 红外与毫米波学报, 2013, 32(3): 193. ZHONG Ying-Hui, WANG Xian-Tai, SU Yong-Bo, CAO Yu-Xiong, ZHANG Yu-Ming, LIU Xin-Yu, JIN Zhi. High performance InP-based In0.52Al0.48As/In0.53Ga0.47As HEMTs with extrinsic transconductance of 1052 mS/mm[J]. Journal of Infrared and Millimeter Waves, 2013, 32(3): 193.

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