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长波InAs/GaSb II类超晶格红外探测器

Long wavelength infrared detector based on Type-II InAs/GaSb superlattice

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摘要

报道了50%截止波长为12.5μm的InAs/GaSb II类超晶格长波红外探测器材料及单元器件.实验采用分子束外延技术在GaSb衬底上生长超晶格材料.吸收区结构为15ML(InAs)/7ML(GaSb),器件采用PBIN的多层异质结构以抑制长波器件暗电流.在77K温度下测试了单元器件的电流-电压(I-V)特性,响应光谱和黑体响应.在该温度下,光敏元大小为100μm×100μm的单元探测器RmaxA为2.5Ωcm2,器件的电流响应率为1.29A/W,黑体响应率为2.1×109cmHz1/2/W,11μm处量子效率为14.3%.采用四种暗电流机制对器件反向偏压下的暗电流密度曲线进行了拟合分析,结果表明起主导作用的暗电流机制为产生复合电流.

Abstract

A 12.5 μm long wavelength infrared detector based on InAs/GaSb Type-II superlattice was presented in this work. Superlattice materials were grown on GaSb substrates using MBE technology. Absorber structure for long wavelength detector was designed to be 15ML(InAs)/7ML(GaSb). The detector used a PBIN multiple heterostructures to decrease the dark current. The dark current I-V curve, responsivity spectra and blackbody current responsivity were measured at 77 K. At this temperature, RmaxA product was 2.5 Ωcm2 for the device with a photo sensitive area of 100 μm× 100μm. At zero bias, a current responsivity of 1.29 A/W was measured for the detector, which correspond to a blackbody detectivity of 2.1×109 cmHz1/2/W. Quantum efficiency at 11 μm was measured to be 14.3%. Dark current characteristics were simulated with four kinds of probable transport mechanisms. The results showed that the dominated dark current of the detector is Generation-Recombination current.

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中图分类号:TN215

DOI:10.3724/sp.j.1010.2013.00210

基金项目:国家自然科学基金(61176082)

收稿日期:2012-04-12

修改稿日期:2012-06-28

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周易:中国科学院上海技术物理研究所 红外材料与器件重点实验室,上海200083中国科学院研究生院,北京100039
陈建新:中国科学院上海技术物理研究所 红外材料与器件重点实验室,上海200083
徐庆庆:中国科学院上海技术物理研究所 红外材料与器件重点实验室,上海200083
徐志成:中国科学院上海技术物理研究所 红外材料与器件重点实验室,上海200083中国科学院研究生院,北京100039
靳川:中国科学院上海技术物理研究所 红外材料与器件重点实验室,上海200083中国科学院研究生院,北京100039暨南大学光电工程研究所,广东 广州510632
许佳佳:中国科学院上海技术物理研究所 红外材料与器件重点实验室,上海200083
金巨鹏:中国科学院上海技术物理研究所 红外材料与器件重点实验室,上海200083中国科学院研究生院,北京100039
何力:中国科学院上海技术物理研究所 红外材料与器件重点实验室,上海200083

联系人作者:周易(zhouyi@mail.sitp.ac.cn)

备注:周易(1986-),男,江苏南通人,中国科学院上海技术物理研究所,博士,主要从事II类超晶格红外探测器材料与器件研究.

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引用该论文

ZHOU Yi,CHEN Jian-Xin,XU Qing-Qing,XU Zhi-Cheng,JIN Chuan,XU Jia-Jia,JIN Ju-Peng,HE Li. Long wavelength infrared detector based on Type-II InAs/GaSb superlattice[J]. Journal of Infrared and Millimeter Waves, 2013, 32(3): 210-214

周易,陈建新,徐庆庆,徐志成,靳川,许佳佳,金巨鹏,何力. 长波InAs/GaSb II类超晶格红外探测器[J]. 红外与毫米波学报, 2013, 32(3): 210-214

被引情况

【1】王忆锋. 2013年的中国红外技术(上). 红外技术, 2014, 36(1): 10-21

【2】张利学,孙维国,吕衍秋,张向锋,姚官生,张小雷,司俊杰. InAs/GaSb Ⅱ类超晶格材料台面腐蚀. 红外与毫米波学报, 2014, 33(5): 472-476

【3】闫欣,汪韬,尹飞,倪海桥,牛智川,辛丽伟,田进寿. 低暗电流InGaAs-MSM光电探测器. 光子学报, 2015, 44(6): 604002--1

【4】王晋伟,刘俊成. GaSb和GaInSb晶体制备工艺研究进展. 激光与光电子学进展, 2017, 54(7): 70007--1

【5】饶 鹏,张 磊,赵云峰,陆福星,许佳佳,王芳芳. 高灵敏度II类超晶格长波红外探测系统研究. 红外与毫米波学报, 2019, 38(3): 338-344

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