光学学报, 2013, 33 (8): 0831003, 网络出版: 2013-08-15   

一种增加单结非晶硅薄膜太阳电池光吸收的结构设计

A Structure Design of the Amorphous Silicon Single-Junction Jhin-Film Solar Cells for Increasing Sunlight Absorption
作者单位
1 宁夏大学物理电气信息学院, 宁夏 银川 750021
2 江西师范大学物理与通信电子学院, 江西 南昌 330022
摘要
提出了一种包含增透膜和背反射层的非晶硅薄膜太阳电池结构,其中增透膜由折射率从低到高的4层介质材料组成,背反射层由三角形介质衍射光栅和一维光子晶体结构组成。利用严格耦合波理论和平面波展开法,对介质层厚度和光栅进行优化设计,数值计算了增透膜和背反射层在入射角为0°~60°之间的反射效率。结果表明,增透膜在300~750 nm波长范围内存在高透射率,背反射层在600~750 nm波长范围内存在高反射率。对于活性层厚度为700 nm的非晶硅薄膜太阳电池,在入射波的TM偏振状态下,入射角小于75°时,电池经优化后在300~750 nm波长范围内平均吸收率为95%。
Abstract
A kind of amorphous silicon(a-Si) thin film solar cell structure, which has an antireflection (AR) coating and a back reflector, is presented. The AR coating consists of four dielectric materials with refractive index from low to high. The back reflector consists of a triangle dielectric diffraction grating and a one-dimensional photonic crystal structure. The parameters of the dielectric layers and the grating are optimized by rigorous coupled wave analysis and plane wave theory method. The reflection efficiency of the AR coating and back reflector with incident angle range of 0°~60° are calculated numerically. The results show that the AR coating has high transmission within the wavelength range of 300~750 nm and the back reflector has high reflection within the wavelength range of 600~750 nm. For the a-Si thin film solar cell with 700-nm-thick active layer, with incident wave of TM polarization and incident angle which is less than 75°, the solar cell has an average absorptance of 95% after optimizing in wavelength range of 300~750 nm.

卢辉东, 沈宏君, 黎磊, 剡文杰. 一种增加单结非晶硅薄膜太阳电池光吸收的结构设计[J]. 光学学报, 2013, 33(8): 0831003. Lu Huidong, Shen Hongjun, Li Lei, Yan Wenjie. A Structure Design of the Amorphous Silicon Single-Junction Jhin-Film Solar Cells for Increasing Sunlight Absorption[J]. Acta Optica Sinica, 2013, 33(8): 0831003.

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