将CdSe/ZnS（核/壳）量子点掺入聚甲基丙烯酸甲酯（PMMA），形成（CdSe/ZnS）/PMMA量子点掺杂光纤材料。测量了不同掺杂浓度下的（CdSe/ZnS）/PMMA的吸收谱、发射谱和折射率。与正己烷溶剂中的CdSe/ZnS量子点比较，PMMA基底不改变CdSe/ZnS量子点的吸收和发射峰值波长。在掺杂质量浓度范围0.013~0.130 mg·mL-1内，实验观测到了光致荧光(PL)峰值强度具有单峰并呈指数平方变化的规律。随掺杂浓度的增加，常温下折射率最大可提高0.0013，PL辐射峰波长出现红移并逐步增大，最大红移量受限于斯托克斯频移。红移产生的原因为量子点的二次吸收发射和掺杂浓度效应。

By adding CdSe/ZnS (core/shell) quantum dots (QDs) into polymethylmethacrylate (PMMA), (CdSe/ZnS)/PMMA QDs doped fiber material is prepared. The absorption-emission spectra and the refractive index of (CdSe/ZnS)/PMMA are measured in respect of doping concentrations. Comparing with the case of the QDs dissolved in n-hexane, the absorption-emission peak wavelengths of the (CdSe/ZnS)/QDs are identical with PMMA substrate. In the doping concentration range 0.013~0.130 mg·mL-1, the observed photoluminescence (PL) peak intensity shows a single peak and follows an exponential square law. As the doping concentration increases, the refractive index increases by 0.0013 at room temperature, and the PL peak wavelength appears a red shift. The maximum red shift is limited by Stokes shift, likely to be related with re-absorption/excitation effect and concentration effect of QDs.