对基底和膜层-基底系统的赝布儒斯特角进行了数值计算.结果显示: 当基底的消光系数小于0.01时，基底的赝布儒斯特角主要是由折射率决定；当基底的消光系数大于0.1时，基底的赝布儒斯特角不仅与折射率有关，而且还与消光系数有关，随着消光系数发生后周期性变化.研究表明: 单层膜-基底系统的赝布儒斯特角主要由膜层的物理厚度、折射率、基底的光学常量所决定；在HfO2-硅和HfO2-融石英基底系统中，赝布儒斯特角随着入射光波长和膜层厚度的变化呈现准周期性规律变化，可能是由入射光在膜层的干涉效应引起的.

Numerical calculation of pseudo-Brewster angles for substrate and thin-film substrate system is demonstrated. The results show: for only substrates, pseudo-Brewster angles are mainly affected by refractive index when the extinction coefficient is lower than 0.01; when the extinction coefficient is above 0.1, the pseudo-Brewster angle is also modulated by the extinction coefficient. The studies indicate: for thin film-substrate systems, pseudo-Brewster angle is influenced by both refractive index and physical thickness of thin film together with optical constants of substrate; in the HfO2 film on silicon and fused silica substrate systems, pseudo-Brewster angles exhibit quasi-periodic characteristic with variation of incident wavelength or thin film thickness, as caused by interference effect.