使用交流电沉积在多孔氧化铝模板中制备金纳米线，对交流电沉积时阻挡层厚度、交流电压、交流频率等因素进行了系统的研究和探讨。使用交流电沉积制备出了直径30 nm、长度2.1 μm的形貌完好、长度均一的金纳米阵列。结果表明模板的阻挡层厚度能够显著影响金属的沉积电位，是保证沉积顺利进行的重要因素。通过记录、分析不同条件下交流沉积过程中时间-电流曲线来对交流沉积过程进行深入研究并提出相应机理。发现同频率下平台电流值不变，纳米线的长度与交流电压大小成正比，而同电压下沉积的平台电流与交流电频率成正比，这些都与阻挡层的半导体特性有关。

The Au nanowires were formed in porous aluminum oxide template by AC electrodeposition method, and the influence of the thickness of barrier layer, voltage and frequency in the AC plating progress was discussed. The diameter of Au nanowires was 30 nm, and the average length was 2.1 μm. The results show that the thickness of the barrier layer would significantly influence the deposition potential, which turned to be the key factor of the deposition process. The current-time curves were recorded to analyze the AC electrodeposition process, showing that the length of nanowires increased proportionately with the alternating voltage, and the stable current of the reaction increased with the frequency. These facts can be explained by the semiconductor property of the barrier layer.