光学学报, 2013, 33 (9): 0931003, 网络出版: 2013-08-08   

太阳能电池光管理用异型分布布拉格反射镜设计与制作技术

Design and Fabrication of an Irregularly Shaped Distributed Bragg Reflector for Hetero-Junction with Intrinsic Thin Layer Solar Cells
作者单位
1 中国科学院上海微系统与信息技术研究所, 上海 200050
2 中国科学院大学, 北京 100049
摘要
根据多光束干涉原理,基于迭代算法,设计出用于异质结太阳能电池的异型分布布拉格反射(IDBR)结构。通过优化设计S1(500 nm+800 nm)、S2(500 nm+900 nm)、S3(500 nm+1000 nm)、S4(500 nm+800 nm+1000 nm)4种不同中心波长组合的异型布拉格背反射结构,发现S3具有最佳宽频带高反射效果,该异质结由两对非晶硅(32 nm)/氮化硅(61.78 nm)分布式布拉格反射(DBR)结构与三对非晶硅(64 nm)/氮化硅(123.57 nm) DBR结构组成。借助等离子体增强化学气相沉积(PECVD)的方法在异质结太阳能电池背面生长出具有五对α-SiH/SiN结构的异型布拉格反射镜,并测试其反射光谱曲线。实验证明该异型布拉格反射镜在730~1155 nm的光谱范围内反射率达到90%,在750~1110 nm波长范围内的反射率高达95%,从而具有显著提高太阳能电池的宽谱吸收效率的潜力,可以对1000~1155 nm范围内的红外光进行有效反射,增强电池对红外波段的吸收。
Abstract
An irregularly shaped distributed Bragg reflector (IDBR) for hetero-junction with intrinsic thin layer (HIT) solar cells is designed and fabricated according to the theory of multi-beam interference and the method of iteration. Four types of IDBRs [S1(500 nm+800 nm), S2(500 nm+900 nm), S3(500 nm+1000 nm), S4(500 nm+800 nm+1000 nm)] are compared and optimized. The result shows that the structure of S3 with two pairs of α-Si(32 nm)/SiN(61.78 nm) and three pairs of α-SiH(64 nm)/SiN(123.57 nm) is the most suitable structure. With the help of plasma enhanced chemical vapor deposition (PECVD), five pairs of α-SiH/SiN distributed Bragg reflector (DBR) multi-layer films is deposited on the back surface of HIT solar cell. The testing result shows that the reflectivity of S3 is larger than 90% in the wavelength range of 730~1155 nm, and larger than 95% in the wavelength range of 750~1110 nm, which shows the great potential for improving the absorption of light in the wavelength range of 1000~1155 nm (infrared wavelength range), and thus enhance the efficiency of HIT solar cell.

周健, 李红飞, 刘毓成, 谈惠祖, 刘正新. 太阳能电池光管理用异型分布布拉格反射镜设计与制作技术[J]. 光学学报, 2013, 33(9): 0931003. Zhou Jian, Li Hongfei, Liu Yuchen, Tan Huizu, Liu Zhengxin. Design and Fabrication of an Irregularly Shaped Distributed Bragg Reflector for Hetero-Junction with Intrinsic Thin Layer Solar Cells[J]. Acta Optica Sinica, 2013, 33(9): 0931003.

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