针对红外探测应用开展了长波 GaAs/AlGaAs量子阱材料技术研究。系统地介绍了量子阱红外探测器材料的材料设计、生长和表征。基于一维薛定谔方程的求解获得量子阱材料的能带结构，进行量子阱材料的设计。采用分子束外延技术进行量子阱材料的生长研究。对量子阱材料的室温光荧光谱和高分辨率 X射线衍射测试结果表现出材料高度晶格完整性以及平整界面。基于布鲁斯特角配置的傅立叶红外光谱测试获得了量子阱材料子带间跃迁吸收产生的红外吸收谱。采用该材料制备出高性能的量子阱红外焦平面探测器。

The GaAs/AlGaAs quantum wells are investigated for the infrared photodetector application. The subband energy of quantum well is calculated for the design of the quantum well structure based on the solve of the Sch.dinger equation. The quantum well material is grown by molecular beam epitaxy. The results of the room photoluminlence（PL）spectrum and high resolution X-ray diffraction（HRXRD）shows the quantum well with high structure integrity and abrupt interface. The infrared absorption of the quantum well is measured at Brewster angle with FTIR. The FPA fabricated on the quantum well wafer shows good properties.