在硅衬底上设计了一种单开口环谐振器，对其太赫兹频段内的透射性质进行了研究。假定通过光注入方式改变衬底硅的电导率，实现了谐振环的双谐振透射率可调。将砷化镓材料生长于该谐振环的开口处，通过光注入方式改变砷化镓材料的电导率，可以实现谐振环的双频LC共振和偶极子共振模式与单频闭合环共振模式之间的转换。这种通过光注入改变半导体材料电导率的方法，可以在不破坏原来谐振器件物理结构的前提下，实现谐振环谐振模式的可逆转换。

An optically tunable splitring resonator (SRR) has been designed on silicon substrate. In the terahertz regime, the sample’s tunable dualresonant properties have been obtained through modulation of the conductivity of silicon substrate. We put gallium arsenide (GaAs) into the gap of SRR, and find that the resonant structure of SRR can be changed by adjusting the conductivity of GaAs. Along with the increase of the conductivity of GaAs, the SRR switches the resonance frequency from dualband LC and dipolar resonance mode to singleband closedring mode. Without destroying the SRR’s physical structure, the method of changing the conductivity of semiconductor can switch resonant mode and can be implemented in terahertz devices to achieve additional functionalities.