利用SilvacoTCAD软件，在532 nm激光辐照下，对正对电极结构6HSiC光导开关（SiCPCSS）瞬态电流电场的分布及不同光功率下的伏安特性进行了仿真。结果表明：载流子速率在强场下达到饱和，并且电流电场在主要电流区域沿垂直于激光辐照方向均匀分布。提出SiCPCSS电路模型的建模依据，可以近似条件化简得到PCSS电阻一般表达式的解，建立SiCPCSS载流子迁移率随电场变化的PSpice模型，分析讨论了外电路参数对SiCPCSS导通过程的影响。该模型模拟结果与已有实验结果吻合良好。

Compact vertical geometry photoconductive semiconductor switches (PCSS) made from SiC are promising candidates for high power switching. Silvaco TCAD is used to simulate the timeresolved electric field current distribution and voltampere characteristics of different light power in vertical geometry Vdoped semiinsulated 6HSiC photoconductive switches excited by 532 nm laser. The simulation shows that the carriers drift velocity with increasing field saturates at a constant velocity, and the timeresolved electric field current is uniformly distributed along the major electric field current direction that is perpendicular to laser incidence direction. With the simplification of semiconductor equations based on the Silvaco TCAD simulations, a SiCPCSS circuit model has been developed in consideration of carrier field dependent mobility. With the help of the validation in reported experiment, the influence of exterior electric parameters is discussed by using the SiCPCSS circuit model.